СПОСОБИ ПІДВИЩЕННЯ ЕФЕКТИВНОСТІ ІМПУЛЬСНИХ ПРИСТРОЇВ СИЛОВОЇ ЕЛЕКТРОНІКИ
The paper examines demonstrative magnetic-semiconductor pulse generators (MSPGs), including their improved assemblies and a unipolar current voltage regulator. The advantages are given: MSPGs -1 with a modernized DC/AC input unit; MSPGs -2 with a throttle output unit for the formation of single-stro...
Gespeichert in:
| Datum: | 2024 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
Інститут електродинаміки Національної академії наук України
2024
|
| Schlagworte: | |
| Online Zugang: | https://prc.ied.org.ua/index.php/proceedings/article/view/372 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Proceedings of the Institute of Electrodynamics of the National Academy of Sciences of Ukraine |
Institution
Proceedings of the Institute of Electrodynamics of the National Academy of Sciences of Ukraine| Zusammenfassung: | The paper examines demonstrative magnetic-semiconductor pulse generators (MSPGs), including their improved assemblies and a unipolar current voltage regulator. The advantages are given: MSPGs -1 with a modernized DC/AC input unit; MSPGs -2 with a throttle output unit for the formation of single-stroke pulses; MSPGs -3 with a transformer output unit for the formation of single-cycle pulses in comparison with known analogues, in which unipolarization of bipolar pulses is carried out at their high-voltage output using numerous semiconductor devices (MSPGs -SD). It was established that the reliability of MSPGs -2 and MSPGs -3 is, at least, an order of magnitude greater than the reliability of MSPGs -SD. In addition, with the help of MSPGs -SD, it is impossible to implement functions related to galvanic isolation, synchronization of loads, simplification of load protection and uncomplicated matching of MSPGs -SD with low-resistance and capacitive loads. It is shown that the AC voltage regulator is able to regulate the voltage on the load from zero to the maximum value, block the load, divert unused electricity, process pulses from nanosecond to millisecond ranges. As a result, materials were obtained for the further processing of the generalized complex synthesis for the improvement of the above-mentioned devices and other impulse devices of power electronics. Ref. 5, fig. 4. |
|---|