ЦИКЛИЧЕСКИЕ ПЕРЕХОДНЫЕ ПРОЦЕССЫ В ЦЕПЯХ ЭЛЕКТРОРАЗРЯДНЫХ УСТАНОВОК С УЧЕТОМ ВЛИЯНИЯ СКОРОСТИ НАРАСТАНИЯ РАЗРЯДНЫХ ТОКОВ И ПАУЗЫ МЕЖДУ НИМИ НА СОПРОТИВЛЕНИЕ НАГРУЗКИ

The cyclic transients in the charge-discharge circuits of capacitor of semiconductor electrical discharge installation using the mathematical model of resistance of the electrical spark load, which depends on magnitude of discharge current,rate of its change and duration of the time pause between di...

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Збережено в:
Бібліографічні деталі
Дата:2018
Автори: Щерба, А.А., Супруновская, Н.И.
Формат: Стаття
Мова:Ukrainian
Опубліковано: Інститут електродинаміки НАН України, Київ 2018
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Онлайн доступ:https://techned.org.ua/index.php/techned/article/view/581
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Назва журналу:Technical Electrodynamics

Репозитарії

Technical Electrodynamics
Опис
Резюме:The cyclic transients in the charge-discharge circuits of capacitor of semiconductor electrical discharge installation using the mathematical model of resistance of the electrical spark load, which depends on magnitude of discharge current,rate of its change and duration of the time pause between discharge pulses are studied. The mathematical model reflects the U-shaped character of the change in the resistance of such load in time (in particular, in the case of volumetric electro-spark dispersion of a layer of current-conductive granules in a dielectric liquid). Also this model takes into account that the load resistance can have different values at the beginning and end of the discharge process of the capacitor and varies during the pause between the discharge pulses. A comparison of the transient results (discharge pulse duration, released in the load energy, average pulse power and rate of current rise in the load) in the discharge circuits with a nonlinear resistance of spark load and the energy-equivalent linear resistance is made. The analysis of ways to improve the dynamic characteristics of pulse currents in the load in the case of control of capacitor discharge duration is carried out. References 17, figures 4, tables 2.