Микрочиповые лазеры с пассивной модуляцией добротности на основе эпитаксиальных структур Nd:АИГ/Cr⁴⁺:АИГ
The features of developing microchip lasers with passive Q-switching are considered. The active medium of the laser is an epitaxial layer of the saturable absorber Cr⁴⁺:YAG grown by liquid-phase epitaxy on an Nd:YAG substrate. Laser mirrors were deposited by electron-beam evaporation. Pumping was c...
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| Datum: | 2005 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.6.30 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The features of developing microchip lasers with passive Q-switching are considered. The active medium of the laser is an epitaxial layer of the saturable absorber Cr⁴⁺:YAG grown by liquid-phase epitaxy on an Nd:YAG substrate. Laser mirrors were deposited by electron-beam evaporation. Pumping was carried out with a continuous-wave semiconductor laser (808 nm). The obtained laser parameters are: pulse duration of 1.3 ns, pulse repetition rate of 5.5 kHz, and peak pulse power of 1.2 kW.
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