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Микрочиповые лазеры с пассивной модуляцией добротности на основе эпитаксиальных структур Nd:АИГ/Cr⁴⁺:АИГ

The features of developing microchip lasers with passive Q-switching are considered. The active medium of the laser is an epitaxial layer of the saturable absorber Cr⁴⁺:YAG grown by liquid-phase epitaxy on an Nd:YAG substrate. Laser mirrors were deposited by electron-beam evaporation. Pumping was c...

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Bibliographic Details
Date:2005
Main Authors: Izhnin, I. I., Vakiv, N. M., Izhnin, А. I., Syvorotka, I. M., Ubizskii, S. B.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2005
Subjects:
микрочиповый лазер
пассивная модуляция добротности
насыщаемый поглотитель
эпитаксиальная структура Nd:АИГ/ Cr 4:АИГ
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.6.30
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The features of developing microchip lasers with passive Q-switching are considered. The active medium of the laser is an epitaxial layer of the saturable absorber Cr⁴⁺:YAG grown by liquid-phase epitaxy on an Nd:YAG substrate. Laser mirrors were deposited by electron-beam evaporation. Pumping was carried out with a continuous-wave semiconductor laser (808 nm). The obtained laser parameters are: pulse duration of 1.3 ns, pulse repetition rate of 5.5 kHz, and peak pulse power of 1.2 kW.

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