Микрочиповые лазеры с пассивной модуляцией добротности на основе эпитаксиальных структур Nd:АИГ/Cr⁴⁺:АИГ

• Date: 2005
• Main Authors: Izhnin, I. I., Vakiv, N. M., Izhnin, А. I., Syvorotka, I. M., Ubizskii, S. B.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2005
• Subjects: микрочиповый лазер; пассивная модуляция добротности; насыщаемый поглотитель; эпитаксиальная структура Nd:АИГ/ Cr 4:АИГ
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.6.30
• Journal Title: Technology and design in electronic equipment

The features of developing microchip lasers with passive Q-switching are considered. The active medium of the laser is an epitaxial layer of the saturable absorber Cr⁴⁺:YAG grown by liquid-phase epitaxy on an Nd:YAG substrate. Laser mirrors were deposited by electron-beam evaporation. Pumping was c...