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Плазмохимическое травление эпитаксиальных структур нитрида галлия

The results of plasma-chemical etching of gallium nitride epitaxial structures on sapphire substrates are presented. Etching was carried out in a plasma-chemical reactor with closed electron drift. The working gases were CCl₄ and its mixtures with O₂ or Ar. A nickel mask with a thickness of 0.5–0.8...

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Bibliographische Detailangaben
Datum:2005
Hauptverfasser: Borisenko, A. G., Polozov, B. P., Fedorovich, O. A., Boltovets, M. S., Ivanov, V. N., Sveschnikov, Yu. N.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2005
Schlagworte:
эпитаксиальные слои
нитрид галлия
плазмохимическое травление
плазмохимический реактор
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.6.42
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Zusammenfassung:The results of plasma-chemical etching of gallium nitride epitaxial structures on sapphire substrates are presented. Etching was carried out in a plasma-chemical reactor with closed electron drift. The working gases were CCl₄ and its mixtures with O₂ or Ar. A nickel mask with a thickness of 0.5–0.8 μm was used. The average etching rate of complex epitaxial structures with gallium nitride, taking into account sapphire etching, was ≤540 Å/min. High-temperature Hall sensors for magnetic field measurements were fabricated.

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