Плазмохимическое травление эпитаксиальных структур нитрида галлия

• Date: 2005
• Main Authors: Borisenko, A. G., Polozov, B. P., Fedorovich, O. A., Boltovets, M. S., Ivanov, V. N., Sveschnikov, Yu. N.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2005
• Subjects: эпитаксиальные слои; нитрид галлия; плазмохимическое травление; плазмохимический реактор
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.6.42
• Journal Title: Technology and design in electronic equipment

The results of plasma-chemical etching of gallium nitride epitaxial structures on sapphire substrates are presented. Etching was carried out in a plasma-chemical reactor with closed electron drift. The working gases were CCl₄ and its mixtures with O₂ or Ar. A nickel mask with a thickness of 0.5–0.8...