Исследование кремниевых диффузионных резисторов при протекании импульса тока большой плотности
Studies are described of the characteristics of silicon diffusion resistors when subjected to current pulses with densities up to destructive levels. Transient processes during the switching of resistors were investigated. The obtained results made it possible to explain the characteristic features...
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| Datum: | 2005 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.23 |
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| Назва журналу: | Technology and design in electronic equipment |