Технологические предпосылки создания МОП-структур с малыми проектными нормами
Physico-technological limitations in the formation of various types of solid-state MOS structures within silicon VLSI and LSI are considered. The possibilities of improving their manufacturability are shown, based on self-aligned processes for forming thin-film structures, including the use of solid...
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| Datum: | 2005 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.42 |
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| Назва журналу: | Technology and design in electronic equipment |