Технологические предпосылки создания МОП-структур с малыми проектными нормами

Physico-technological limitations in the formation of various types of solid-state MOS structures within silicon VLSI and LSI are considered. The possibilities of improving their manufacturability are shown, based on self-aligned processes for forming thin-film structures, including the use of solid...

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Bibliographische Detailangaben
Datum:2005
1. Verfasser: Baranov, V. V.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2005
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Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.42
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment