Влияние гамма-облучения на фотоэлектрические параметры InSe-гетероструктур
The influence of γ‑irradiation (60Co) on the photoelectric parameters of InSe diodes has been investigated. Irradiation at doses of 10–300 R leads to an increase in the values of the current rectification coefficient, open‑circuit voltage, and short‑circuit current, while practically not affecting t...
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| Datum: | 2005 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.47 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The influence of γ‑irradiation (60Co) on the photoelectric parameters of InSe diodes has been investigated. Irradiation at doses of 10–300 R leads to an increase in the values of the current rectification coefficient, open‑circuit voltage, and short‑circuit current, while practically not affecting the spectral distribution of the photoresponse. No destructive effect on the p‑n junction boundary was observed. It is shown that p‑n‑InSe and oxide‑p‑InSe photodiodes can be operated under conditions of elevated radiation background. |
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