Влияние гамма-облучения на фотоэлектрические параметры InSe-гетероструктур

The influence of γ‑irradiation (60Co) on the photoelectric parameters of InSe diodes has been investigated. Irradiation at doses of 10–300 R leads to an increase in the values of the current rectification coefficient, open‑circuit voltage, and short‑circuit current, while practically not affecting t...

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Bibliographic Details
Date:2005
Main Authors: Kovalyuk, Z. D., Katerinchuk, V. N., Politanskaya, O. A., Sidor, O. N.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2005
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.47
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment