Емкостные свойства МДП-структур HgCdTe/SiO2/Si3N4

• Datum: 2005
• Hauptverfasser: Voitsekhovskii, A. V., Nesmelov, S. N., Kulchitskii, N. A.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2005
• Schlagworte: МДП-структуры; HgCdTe; вольт-фарадные характеристики; варизонные слои
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.4.35
• Назва журналу: Technology and design in electronic equipment

The capacitance–voltage characteristics of n(p)-HgCdTe/SiO2/Si3N4 and n(p)-HgCdTe/anodic oxide film MIS structures have been experimentally investigated at different frequencies and voltage sweep directions. Specific features of electrophysical characteristics have been identified, associated with t...