Детекторы оптического сигнала на основе структур Au-nSi-Al, Au-nSi
Au–nSi–Al structures with oppositely connected rectifying junctions and Au–nSi structures with protective high-resistance layers overlapping the metal have been obtained. It is shown that the photosensitivity of the Au–nSi–Al structure in the short-wavelength region is nearly an order of magnitude...
Збережено в:
| Дата: | 2005 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.4.39 |
| Теги: |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | Au–nSi–Al structures with oppositely connected rectifying junctions and Au–nSi structures with protective high-resistance layers overlapping the metal have been obtained. It is shown that the photosensitivity of the Au–nSi–Al structure in the short-wavelength region is nearly an order of magnitude higher than in the visible spectral region. The creation of an active layer from a higher-resistance near-surface region in the Au–nSi structure, along with the expansion of the spectral range, enhances its photosensitivity. The obtained structures are of interest for optical signal detection.
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