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Детекторы оптического сигнала на основе структур Au-nSi-Al, Au-nSi

Au–nSi–Al structures with oppositely connected rectifying junctions and Au–nSi structures with protective high-resistance layers overlapping the metal have been obtained. It is shown that the photosensitivity of the Au–nSi–Al structure in the short-wavelength region is nearly an order of magnitude...

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Bibliographic Details
Date:	2005
Main Authors:	Yodgorova, D. M., Yakubov, E. N.
Format:	Article
Language:	Ukrainian
Published:	PE "Politekhperiodika", Book and Journal Publishers 2005
Subjects:	структура фоточувствительность двухбарьерный кремний
Online Access:	https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.4.39
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Journal Title:	Technology and design in electronic equipment

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Technology and design in electronic equipment

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