Детекторы оптического сигнала на основе структур Au-nSi-Al, Au-nSi
Au–nSi–Al structures with oppositely connected rectifying junctions and Au–nSi structures with protective high-resistance layers overlapping the metal have been obtained. It is shown that the photosensitivity of the Au–nSi–Al structure in the short-wavelength region is nearly an order of magnitude...
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| Datum: | 2005 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.4.39 |
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| Назва журналу: | Technology and design in electronic equipment |