Технология получения пленок силицида палладия для мощных диодов Шоттки
A technology is proposed for forming transition layers of palladium silicide through a solid-phase reaction of a palladium film with a silicon substrate directly during deposition, without the need for subsequent thermal treatment. Studies of the elemental composition and crystalline structure of...
Збережено в:
| Дата: | 2005 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.4.55 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | A technology is proposed for forming transition layers of palladium silicide through a solid-phase reaction of a palladium film with a silicon substrate directly during deposition, without the need for subsequent thermal treatment. Studies of the elemental composition and crystalline structure of the obtained silicide layers have been carried out, and the barrier height to n-type silicon has been measured. The possibility of using the resulting palladium silicide layers for the fabrication of high-power Schottky diodes has been demonstrated.
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