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Влияние режимов ионного легирования и фотонного отжига на параметры имплантированных слоев n-GaAs:Si

The paper presents the results of studies on the influence of ion implantation regimes and pulsed incoherent photon annealing on the parameters of Si-implanted n-GaAs layers grown on semi-insulating GaAs substrates. The obtained layers are characterized by the following parameters: thickness of 0.1–...

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Bibliographic Details
Date:2005
Main Authors: Bonchyk, A. Yu., Izhnin, I. I., Kyjak, S. G., Savytsky, G. V.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2005
Subjects:
GaAs
ионная имплантация
фотонный отжиг
концентрация носителей
активность примеси
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.03
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The paper presents the results of studies on the influence of ion implantation regimes and pulsed incoherent photon annealing on the parameters of Si-implanted n-GaAs layers grown on semi-insulating GaAs substrates. The obtained layers are characterized by the following parameters: thickness of 0.1–0.3 μm, electron concentration of 1017–1018 cm−3, and mobility of 2000–3000 cm2/(V·s).

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