Влияние режимов ионного легирования и фотонного отжига на параметры имплантированных слоев n-GaAs:Si

• Date: 2005
• Main Authors: Bonchyk, A. Yu., Izhnin, I. I., Kyjak, S. G., Savytsky, G. V.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2005
• Subjects: GaAs; ионная имплантация; фотонный отжиг; концентрация носителей; активность примеси
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.03
• Journal Title: Technology and design in electronic equipment

The paper presents the results of studies on the influence of ion implantation regimes and pulsed incoherent photon annealing on the parameters of Si-implanted n-GaAs layers grown on semi-insulating GaAs substrates. The obtained layers are characterized by the following parameters: thickness of 0.1–...