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Влияние термообработки на электрофизические свойства CdZnTe-детекторов γ-излучения

The effect of heat treatment (HT) on the electrophysical properties of γ-ray detectors based on a p-type CdZnTe semiconductor compound was investigated. The optimal HT conditions were determined. It was shown that the application of HT allows for a significant reduction in leakage current and an inc...

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Bibliographic Details
Date:2005
Main Authors: Kutniy, V. E., Kutniy, D. V., Rybka, A. V., Abyzov, A. S., Davydov, L. N., Nakonechny, D. V., Shlyakhov, I. N.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2005
Subjects:
полупроводниковый детектор
CdZnTe
вольт-амперная характеристика
омический контакт
структура
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.12
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The effect of heat treatment (HT) on the electrophysical properties of γ-ray detectors based on a p-type CdZnTe semiconductor compound was investigated. The optimal HT conditions were determined. It was shown that the application of HT allows for a significant reduction in leakage current and an increase in operating voltage, which contributes to an improvement in the spectrometric characteristics of the detector. Experimental results are presented demonstrating that the change in the detector’s characteristics is largely due to modification of the metal-semiconductor interface rather than changes in the properties of the side surface.

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