Влияние термообработки на электрофизические свойства CdZnTe-детекторов γ-излучения

• Дата: 2005
• Автори: Kutniy, V. E., Kutniy, D. V., Rybka, A. V., Abyzov, A. S., Davydov, L. N., Nakonechny, D. V., Shlyakhov, I. N.
• Формат: Стаття
• Мова: Українська
• Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2005
• Теми: полупроводниковый детектор; CdZnTe; вольт-амперная характеристика; омический контакт; структура
• Онлайн доступ: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.12
• Назва журналу: Technology and design in electronic equipment

The effect of heat treatment (HT) on the electrophysical properties of γ-ray detectors based on a p-type CdZnTe semiconductor compound was investigated. The optimal HT conditions were determined. It was shown that the application of HT allows for a significant reduction in leakage current and an inc...