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Влияние термообработки на электрофизические свойства CdZnTe-детекторов γ-излучения

The effect of heat treatment (HT) on the electrophysical properties of γ-ray detectors based on a p-type CdZnTe semiconductor compound was investigated. The optimal HT conditions were determined. It was shown that the application of HT allows for a significant reduction in leakage current and an inc...

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Bibliographic Details
Date:2005
Main Authors: Kutniy, V. E., Kutniy, D. V., Rybka, A. V., Abyzov, A. S., Davydov, L. N., Nakonechny, D. V., Shlyakhov, I. N.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2005
Subjects:
полупроводниковый детектор
CdZnTe
вольт-амперная характеристика
омический контакт
структура
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.12
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.12

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