Микроэлектронные термодиодные сенсоры экстремальной электроники
The results of fundamental and metrological studies used for the development of diode temperature sensors for extreme electronics are presented. The sensors, designed on the basis of modern industrial technology for manufacturing silicon diode chips, have been applied in multichannel systems for t...
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| Date: | 2005 |
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| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.30 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The results of fundamental and metrological studies used for the development of diode temperature sensors for extreme electronics are presented. The sensors, designed on the basis of modern industrial technology for manufacturing silicon diode chips, have been applied in multichannel systems for temperature monitoring of Unit IV at the Chernobyl Nuclear Power Plant and for controlling temperature regimes during fueling operations in Zenit-3SL launch vehicles.
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