Микроэлектронные термодиодные сенсоры экстремальной электроники
The results of fundamental and metrological studies used for the development of diode temperature sensors for extreme electronics are presented. The sensors, designed on the basis of modern industrial technology for manufacturing silicon diode chips, have been applied in multichannel systems for t...
Збережено в:
| Дата: | 2005 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.30 |
| Теги: |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The results of fundamental and metrological studies used for the development of diode temperature sensors for extreme electronics are presented. The sensors, designed on the basis of modern industrial technology for manufacturing silicon diode chips, have been applied in multichannel systems for temperature monitoring of Unit IV at the Chernobyl Nuclear Power Plant and for controlling temperature regimes during fueling operations in Zenit-3SL launch vehicles.
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