Установка электрохимического профилирования для диагностирования эпитаксиальных структур GaAs

• Date: 2005
• Main Authors: Vakiv, N. M., Zaverbniy, I. R., Zayachuk, D. M., Krukovsky, S. I., Mrykhin, I. O.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2005
• Subjects: GaAs; электрохимическое профилирование; барьер
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.40
• Journal Title: Technology and design in electronic equipment

An electrochemical profiling setup for semiconductor structures has been developed, in which the concentration of free charge carriers is determined from the capacitance–voltage characteristics of the electrolyte–semiconductor barrier, while scanning through the thickness of epitaxial layers is perf...