Установка электрохимического профилирования для диагностирования эпитаксиальных структур GaAs
An electrochemical profiling setup for semiconductor structures has been developed, in which the concentration of free charge carriers is determined from the capacitance–voltage characteristics of the electrolyte–semiconductor barrier, while scanning through the thickness of epitaxial layers is perf...
Saved in:
| Date: | 2005 |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2005
|
| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.40 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Technology and design in electronic equipment |