Схемотехническое моделирование и синтез активных СВЧ-фильтров на полевых транзисторах Шоттки
Existing mathematical models of Schottky field-effect transistors are analyzed. Studies were conducted on the dependence of the invariant stability coefficient for three transistor connection schemes, as well as on the output resistance of the common-drain circuit with inductive and active resistanc...
Збережено в:
| Дата: | 2005 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.49 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | Existing mathematical models of Schottky field-effect transistors are analyzed. Studies were conducted on the dependence of the invariant stability coefficient for three transistor connection schemes, as well as on the output resistance of the common-drain circuit with inductive and active resistance connected at the input. Schemes of active microwave filters suitable for implementation as hybrid or semiconductor integrated circuits have been developed. |
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