Схемотехническое моделирование и синтез активных СВЧ-фильтров на полевых транзисторах Шоттки

Existing mathematical models of Schottky field-effect transistors are analyzed. Studies were conducted on the dependence of the invariant stability coefficient for three transistor connection schemes, as well as on the output resistance of the common-drain circuit with inductive and active resistanc...

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Bibliographische Detailangaben
Datum:2005
Hauptverfasser: Filinyuk, N. А., Kuzemko, А. М.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2005
Schlagworte:
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.49
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment