Исследование фотоэлектрических свойств симметричной гетероструктуры "окисел–InSe–окисел"
The possibility of fabricating an n–p–n type phototransistor based on a double heterostructure “oxide–InSe–oxide” is demonstrated. Photocurrent amplification in the phototransistor occurs only for initial sample thicknesses comparable to the diffusion length of minority charge carriers. A distinctiv...
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| Date: | 2005 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.1.38 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The possibility of fabricating an n–p–n type phototransistor based on a double heterostructure “oxide–InSe–oxide” is demonstrated. Photocurrent amplification in the phototransistor occurs only for initial sample thicknesses comparable to the diffusion length of minority charge carriers. A distinctive feature of the amplification is the transition of the phototransistor from a high-resistance to a low-resistance state at certain voltages and illumination levels. The higher the illumination level, the lower the transition voltage. The current density through the phototransistor during such a transition can reach 60–100 mA/cm². |
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