Исследование фотоэлектрических свойств симметричной гетероструктуры "окисел–InSe–окисел"

• Datum: 2005
• Hauptverfasser: Kovalyuk, Z. D., Katerynchuk, V. M., Sydor, O. N.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2005
• Schlagworte: ІnSe; оксид; фототранзистор
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.1.38
• Назва журналу: Technology and design in electronic equipment

The possibility of fabricating an n–p–n type phototransistor based on a double heterostructure “oxide–InSe–oxide” is demonstrated. Photocurrent amplification in the phototransistor occurs only for initial sample thicknesses comparable to the diffusion length of minority charge carriers. A distinctiv...