Технологические приемы улучшения теплового режима выращивания кристаллов GaAs методом Чохральского
For the Czochralski method with liquid encapsulation of the melt and an additional heater immersed in the flux, the dependence of the temperature gradient G near the crystallization front in GaAs crystals on the heater power, its distance from the crystal, as well as on the conditions of thermal shi...
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| Date: | 2004 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2004
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.6.03 |
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| Journal Title: | Technology and design in electronic equipment |