Микронегатронный преобразователь давления на основе кремниевой МОП-структуры
The influence of local anisotropic pressure on a silicon MOS structure has been investigated. It is shown that the increase in inversion capacitance is associated not only with the growth of positive carriers in the oxide at the Si–SiO interface under the influence of local pressure, but also with t...
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| Datum: | 2004 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2004
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.5.29 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The influence of local anisotropic pressure on a silicon MOS structure has been investigated. It is shown that the increase in inversion capacitance is associated not only with the growth of positive carriers in the oxide at the Si–SiO interface under the influence of local pressure, but also with the reduction of the semiconductor band gap width. A negatron circuit is proposed that converts pressure into frequency. |
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