Микронегатронный преобразователь давления на основе кремниевой МОП-структуры

• Date: 2004
• Main Authors: Gasanov, A. M., Kasimov, F. D., Lutfalibekova, A. E.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2004
• Subjects: негатрон; МОП-структура; локальное давление; упругие механические напряжения; ширина запрещенной зоны
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.5.29
• Journal Title: Technology and design in electronic equipment

The influence of local anisotropic pressure on a silicon MOS structure has been investigated. It is shown that the increase in inversion capacitance is associated not only with the growth of positive carriers in the oxide at the Si–SiO interface under the influence of local pressure, but also with t...