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Выбор полупроводникового материала для детекторов гамма-излучения

Among the semiconductors used in spectrometers and dosimeters, wide-bandgap compounds such asCd1-xZnxTe, CdTe, and HgI2 occupy leading positions. The question arises as to whether this choice is definitive and optimal. In an attempt to answer this question, physical parameters critical to the detect...

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Bibliographische Detailangaben
Datum:2004
Hauptverfasser: Abyzov, A. S., Azhazha, V. M., Davydov, L. N., Kovtun, G. P., Kutny, V. E., Rybka, A. V.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2004
Schlagworte:
детектор
γ-излучение
полупроводниковые соединения
ширина запрещенной зоны
подвижность
время жизни
удельное сопротивление
атомный номер
периодическая таблица элементов
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.03
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:Among the semiconductors used in spectrometers and dosimeters, wide-bandgap compounds such asCd1-xZnxTe, CdTe, and HgI2 occupy leading positions. The question arises as to whether this choice is definitive and optimal. In an attempt to answer this question, physical parameters critical to the detector’s sensitivity were selected. These include, first and foremost, mobility, lifetime, atomic number, and resistivity. Based on the selected parameters, an analysis of binary compounds with a tetrahedral structure was conducted.

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