Полупроводниковые гетеропереходы оксид-InSe(GaSe) для фотоэлектрических анализаторов поляризованного излучения
The phenomenon of photopleochroism in oxide–p-InSe and n+-In₂O₃–p-GaSe heterojunctions was investigated over a wide spectral range. Maximum values of the photopleochroism coefficient (reaching 65% in In₂O₃-GaSe and — 40%) were obtained for the edge absorption of light by the crystals, which coincide...
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| Datum: | 2004 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2004
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.07 |
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| Назва журналу: | Technology and design in electronic equipment |