Полупроводниковые гетеропереходы оксид-InSe(GaSe) для фотоэлектрических анализаторов поляризованного излучения

• Date: 2004
• Main Authors: Kovalyuk, Z. D., Katerynchuk, V. M.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2004
• Subjects: фотоплеохроизм; GaSe; ІnSe; гетеропереход
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.07
• Journal Title: Technology and design in electronic equipment

The phenomenon of photopleochroism in oxide–p-InSe and n+-In₂O₃–p-GaSe heterojunctions was investigated over a wide spectral range. Maximum values of the photopleochroism coefficient (reaching 65% in In₂O₃-GaSe and — 40%) were obtained for the edge absorption of light by the crystals, which coincide...