Акустостимулированное понижение температуры отжига радиационных дефектов в кристаллах Ge
ultrasonic treatment, isochronous annealing, neutron-doped germanium, radiation defects A method is proposed for annealing semiconductors under ultrasonic irradiation (f = 5–10 MHz, W < 10⁴ W/m²). Isochronous annealing of radiation defects was performed on model samples of neutron-doped G...
Збережено в:
| Дата: | 2004 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2004
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.09 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | ultrasonic treatment, isochronous annealing, neutron-doped germanium, radiation defects
A method is proposed for annealing semiconductors under ultrasonic irradiation (f = 5–10 MHz, W < 10⁴ W/m²). Isochronous annealing of radiation defects was performed on model samples of neutron-doped Ge (Фn ≈ 1015 cm⁻²) (Тan = 90–460 °C, t = 30 min, ΔТan=30°С). Comparative results of measurements of electrophysical parameters (using the Hall method in the range T = 77–300 K) are presented. It was found that the mechanism of ultrasonic interaction boils down to the acceleration of point defect diffusion due to a decrease in activation energy and an increase in the concentration of non-equilibrium defects. |
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