Акустостимулированное понижение температуры отжига радиационных дефектов в кристаллах Ge

ultrasonic treatment, isochronous annealing, neutron-doped germanium, radiation defects A method is proposed for annealing semiconductors under ultrasonic irradiation (f = 5–10 MHz, W < 10⁴ W/m²). Isochronous annealing of radiation defects was performed on model samples of neutron-doped G...

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Bibliographic Details
Date:2004
Main Authors: Olikh, Ja. M., Lysiuk, I. O., Tymochko, M. D.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2004
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.09
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment