Разработка конструкции и технологии изготовления диодов Ганна для КВЧ-терапии
The design and fabrication technology of Gunn diodes for use in EHF therapy are described. The operating frequency is 42 GHz, with an output power of over 1 mW at an operating current of less than 120 mA. The diodes are fabricated from n–n+ type GaAs epitaxial structures. The n-layer thickness is 2....
Збережено в:
| Дата: | 2004 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2004
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.55 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The design and fabrication technology of Gunn diodes for use in EHF therapy are described. The operating frequency is 42 GHz, with an output power of over 1 mW at an operating current of less than 120 mA. The diodes are fabricated from n–n+ type GaAs epitaxial structures. The n-layer thickness is 2.4–2.6 μm, and the carrier concentration is (8...9)×1015 cm–3. A multilayer Ge–Au–TiB2–Au contact was used as the cathode. The formation of an ohmic contact on the surface of the n-layer creates a heterogeneity that promotes the formation of a domain at this location. |
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