Разработка конструкции и технологии изготовления диодов Ганна для КВЧ-терапии

• Date: 2004
• Main Authors: Ivanov, V. N., Kovtonjuk, V. M., Raevskaya, N. S.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2004
• Subjects: КВЧ-терапия; диод Ганна; арсенид галлия
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.55
• Journal Title: Technology and design in electronic equipment

The design and fabrication technology of Gunn diodes for use in EHF therapy are described. The operating frequency is 42 GHz, with an output power of over 1 mW at an operating current of less than 120 mA. The diodes are fabricated from n–n+ type GaAs epitaxial structures. The n-layer thickness is 2....