Эффекты переключения и памяти в МОП-структурах Al–SiO2–Si

• Date: 2004
• Main Authors: Iskender-zade, Z. A., Akhundov, M. R., Jafarova, E. A., Alikhanova, Sh. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2004
• Subjects: МОП-структура; переключение; элемент памяти; пороговое напряжение; время задержки; глубокие ловушки
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.2.59
• Journal Title: Technology and design in electronic equipment

By studying current-voltage characteristics and non-stationary transient processes, the mechanisms of switching and memory effects in Al–SiO2–Si structures have been clarified, as well as the possibility of their practical application in the creation of stable and controllable memory elements.