Исследование свойств полупроводниковых материалов для детекторов ионизирующих излучений
Using computer modeling, the drift mobility of conduction electrons (µ) and the specific resistivity (ρ) of CdZnTe detector material were investigated as functions of impurity composition and the molar fraction of CdTe (CCdTe ) at a temperature of T = 300 K. It was established that an increase in th...
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| Datum: | 2003 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.03 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | Using computer modeling, the drift mobility of conduction electrons (µ) and the specific resistivity (ρ) of CdZnTe detector material were investigated as functions of impurity composition and the molar fraction of CdTe (CCdTe ) at a temperature of T = 300 K. It was established that an increase in the band gap Eg0 (at T = 0) from 1.6 eV (corresponding to CCdTe = 1) to 1.8 eV (CCdTe ≈ 0.8) leads to an increase in ρ by approximately two orders of magnitude. With the initial background impurity composition preserved, a further increase in Eg0 up to 2.1 eV (CCdTe ≈ 0.5) does not significantly affect the value of Eg0. |
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