Выращивание гетероструктур GaSb/InAs жидкофазной эпитаксией без растворения подложки
The features of GaSb/InAs heterostructure growth from the liquid phase are considered. A modified method of pulsed cooling of the solution–melt is proposed, which makes it possible to avoid dissolution of the InAs substrate when in contact with the nonequilibrium Ga+Sb liquid phase. It is shown th...
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| Date: | 2003 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.06 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The features of GaSb/InAs heterostructure growth from the liquid phase are considered. A modified method of pulsed cooling of the solution–melt is proposed, which makes it possible to avoid dissolution of the InAs substrate when in contact with the nonequilibrium Ga+Sb liquid phase. It is shown that in the absence of substrate dissolution by the solution–melt, the formation of InGaAsSb solid solutions during the growth of the GaSb epitaxial layer does not occur, since solid-phase dissolution of GaSb by the InAs substrate is energetically unfavorable.
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