Выращивание гетероструктур GaSb/InAs жидкофазной эпитаксией без растворения подложки

• Date: 2003
• Main Authors: Maronchuk, I. E., Kurak, V. V., Andronova, E. V., Baganov, E. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2003
• Subjects: жидкофазная эпитаксия; растворение; GaSb; InAs; механическое напряжение
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.06
• Journal Title: Technology and design in electronic equipment

The features of GaSb/InAs heterostructure growth from the liquid phase are considered. A modified method of pulsed cooling of the solution–melt is proposed, which makes it possible to avoid dissolution of the InAs substrate when in contact with the nonequilibrium Ga+Sb liquid phase. It is shown th...