Выращивание гетероструктур GaSb/InAs жидкофазной эпитаксией без растворения подложки
The features of GaSb/InAs heterostructure growth from the liquid phase are considered. A modified method of pulsed cooling of the solution–melt is proposed, which makes it possible to avoid dissolution of the InAs substrate when in contact with the nonequilibrium Ga+Sb liquid phase. It is shown th...
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| Datum: | 2003 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.06 |
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| Назва журналу: | Technology and design in electronic equipment |