Исследование свойств слоев поликремния на изоляторе при криогенных температурах для создания сенсоров
Samples of p-type polysilicon on dielectric substrates were investigated in the temperature range of 4.2–300 K and magnetic fields up to 14 T, as well as the effect of mechanical strain on their resistance. It was shown that lightly doped, non-recrystallized poly-Si resistors (2.4·1018 cm–3) can be...
Збережено в:
| Дата: | 2003 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.10 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | Samples of p-type polysilicon on dielectric substrates were investigated in the temperature range of 4.2–300 K and magnetic fields up to 14 T, as well as the effect of mechanical strain on their resistance. It was shown that lightly doped, non-recrystallized poly-Si resistors (2.4·1018 cm–3) can be recommended as highly sensitive thermoresistors. For piezoresistive sensors of mechanical quantities, heavily doped, laser-recrystallized poly-Si resistors (~1.7·1020 cm–3) are recommended. These resistors also demonstrate the highest stability under strong magnetic fields. |
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