Исследование свойств слоев поликремния на изоляторе при криогенных температурах для создания сенсоров

• Date: 2003
• Main Authors: Druzhinin, A. A., Maryamova, I. I., Matvienko, S. N., Khoverko, Yu. N.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2003
• Subjects: поликремний на изоляторе; лазерная рекристаллизация; сенсор; криогенные температуры; магнитные поля
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.10
• Journal Title: Technology and design in electronic equipment

Samples of p-type polysilicon on dielectric substrates were investigated in the temperature range of 4.2–300 K and magnetic fields up to 14 T, as well as the effect of mechanical strain on their resistance. It was shown that lightly doped, non-recrystallized poly-Si resistors (2.4·1018 cm–3) can be...