Исследование свойств слоев поликремния на изоляторе при криогенных температурах для создания сенсоров
Samples of p-type polysilicon on dielectric substrates were investigated in the temperature range of 4.2–300 K and magnetic fields up to 14 T, as well as the effect of mechanical strain on their resistance. It was shown that lightly doped, non-recrystallized poly-Si resistors (2.4·1018 cm–3) can be...
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| Date: | 2003 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.10 |
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| Journal Title: | Technology and design in electronic equipment |