Моделирование транзисторов с высокой подвижностью электронов
The paper considers issues of modeling high electron mobility transistors (HEMT). The requirements for HEMT models are outlined. The most common types of models are described: small-signal, noise, nonlinear, and distributed. An algorithm for extracting parameters of the small-signal model is present...
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| Datum: | 2003 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.20 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The paper considers issues of modeling high electron mobility transistors (HEMT). The requirements for HEMT models are outlined. The most common types of models are described: small-signal, noise, nonlinear, and distributed. An algorithm for extracting parameters of the small-signal model is presented. References are provided to sources describing parameter extraction algorithms for noise and nonlinear models. Recommendations are given on choosing a transistor model for designing specific devices. The task of developing a universal model and introducing corresponding changes into software is formulated. |
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