Моделирование транзисторов с высокой подвижностью электронов

The paper considers issues of modeling high electron mobility transistors (HEMT). The requirements for HEMT models are outlined. The most common types of models are described: small-signal, noise, nonlinear, and distributed. An algorithm for extracting parameters of the small-signal model is present...

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Bibliographische Detailangaben
Datum:2003
1. Verfasser: Emtsev, P. A.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2003
Schlagworte:
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.20
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment

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